Vishay PCS IRF730PBF
MOSFET, Power,N-Ch,VDSS 400V,RDS(ON) 1Ohm,ID 5.5A,TO-220AB,PD 74W,VGS+/-20V,-55C
Mfr. Part #: IRF730PBF / RS Stock #: 70079037
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Price
Qty.
Standard Price
1
$2.03704
5
$1.88034
10
$1.79487
100
$1.62393
250
$1.52422
500
$1.32479
Additional Inventory
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
Search
Channel Type
N
Configuration
Single
Drain Current
5.5 A
Drain to Source On Resistance
1 Ohms
Drain to Source Voltage
400 V
Forward Transconductance
2.9 S
Forward Voltage, Diode
1.6 V
Gate to Source Voltage
20 V
Input Capacitance
700 pF @ 25 V pF
Maximum Operating Temperature
150 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
74 W
Product Header
Hexfet® Power MOSFET
Temperature Operating Range
-55 to +150 °C
Total Gate Charge
38 nC
Turn Off Delay Time
38 ns
Turn On Delay Time
10 ns
Typical Gate Charge @ Vgs
Maximum of 38 nC @ 10 V
Voltage, Breakdown, Drain to Source
400 V
Overview
Vishay IRF Series Power MOSFETs
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Features:
Fast Switching
P-Channel
Dynamic dV/dt Rating
Compliant to RoHS Directive 2002/95/EC
Ease of Paralleling
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Features:
